Method for Forming Semiconductor Device Structure with Gate and Resulting Structures

ABSTRACT

A semiconductor device structure is provided. The device includes a dielectric layer over a substrate. The substrate has a fin structure, and the dielectric layer has a trench exposing a portion of the fin structure. The includes a gate material layer in the trench. The gate material has a topmost surface that is highly planar.

PRIORITY CLAIM

This application is a divisional of U.S. patent application Ser. No. 16/719,694, filed on Dec. 18, 2019, and entitled “Method for Forming Semiconductor Device Structure with Gate and Resulting Structures,” which is a continuation of U.S. patent application Ser. No. 15/791,289, filed on Oct. 23, 2017, and entitled “Method for Forming Semiconductor Device Structure with Gate,” now U.S. Pat. No. 10,522,411 issued on Dec. 31, 2019, which is a divisional of U.S. patent application Ser. No. 14/625,291, now U.S. Pat. No. 9,799,565 issued on Oct. 24, 2017, entitled “Method for Forming Semiconductor Device Structure with Gate” and filed on Feb. 18, 2015, which application claims the benefit of U.S. Provisional Application No. 62/096,753, filed on Dec. 24, 2014, the entirety of which applications are incorporated by reference herein.

BACKGROUND

The semiconductor integrated circuit (IC) industry has experienced rapid growth. Technological advances in IC materials and design have produced generations of ICs. Each generation has smaller and more complex circuits than the previous generation. However, these advances have increased the complexity of processing and manufacturing ICs.

In the course of IC evolution, functional density (i.e., the number of interconnected devices per chip area) has generally increased while geometric size (i.e., the smallest component (or line) that can be created using a fabrication process) has decreased. This scaling-down process generally provides benefits by increasing production efficiency and lowering associated costs.

However, since feature sizes continue to decrease, fabrication processes continue to become more difficult to perform. Therefore, it is a challenge to form reliable semiconductor devices at smaller and smaller sizes.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the following detailed description when read with the accompanying figures. It should be noted that, in accordance with standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.

FIG. 1A is a perspective view of a semiconductor device structure, in accordance with some embodiments.

FIG. 1B is a top view of the semiconductor device structure of FIG. 1A, in accordance with some embodiments.

FIGS. 2A-2H are cross-sectional views of various stages of a process for forming a semiconductor device structure, in accordance with some embodiments.

FIG. 3A is a perspective view of a semiconductor device structure, in accordance with some embodiments.

FIG. 3B is a top view of the semiconductor device structure of FIG. 3A, in accordance with some embodiments.

FIG. 4A-1 to FIG. 4G-1 are cross-sectional views of various stages of a process for forming a semiconductor device structure, in accordance with some embodiments.

FIG. 4A-2 to FIG. 4G-2 are cross-sectional views of various stages of the process for forming a semiconductor device structure, in accordance with some embodiments.

FIG. 5 is a cross-sectional view of a plasma apparatus, in accordance with some embodiments.

FIG. 6A is a perspective view of the semiconductor device structure of FIGS. 4G-1 and 4G-2, in accordance with some embodiments.

FIG. 6B is a top view of the semiconductor device structure of FIGS. 4G-1 and 4G-2, in accordance with some embodiments.

FIG. 7 is an enlarged view of a gate stack, in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, or examples, for implementing different features of the subject matter provided. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly. It should be understood that additional operations can be provided before, during, and after the method, and some of the operations described can be replaced or eliminated for other embodiments of the method.

FIG. 1A is a perspective view of a semiconductor device structure 100, in accordance with some embodiments. FIG. 1B is a top view of the semiconductor device structure 100 of FIG. 1A, in accordance with some embodiments. FIG. 2A is a cross-sectional view illustrating the semiconductor device structure 100 along a sectional line 1-1′ in FIG. 1B, in accordance with some embodiments.

As shown in FIGS. 1A, 1B, and 2A, a substrate 110 is provided, in accordance with some embodiments. The substrate 110 includes a semiconductor wafer (such as a silicon wafer) or a portion of a semiconductor wafer. In some embodiments, the substrate 110 is made of an elementary semiconductor material including silicon or germanium in a single crystal, polycrystal, or amorphous structure.

In some other embodiments, the substrate 110 is made of a compound semiconductor, such as silicon carbide, gallium arsenide, gallium phosphide, indium phosphide, indium arsenide, an alloy semiconductor, such as SiGe, or GaAsP, or combinations thereof. The substrate 110 may also include multi-layer semiconductors, semiconductor on insulator (SOI) (such as silicon on insulator or germanium on insulator), or combinations thereof.

In addition, the substrate 110 may include structures such as doped regions, interlayer dielectric (ILD) layers, and/or conductive features. Furthermore, the substrate 110 may further include single or multiple material layers. For example, the material layers may include a silicon layer, a dielectric layer, and/or a doped poly-silicon layer.

As shown in FIGS. 1A, 1B, and 2A, the substrate 110 has fin structures 112, in accordance with some embodiments. The fin structures 112 are spaced apart from each other, in accordance with some embodiments. In some embodiments, the fin structures 112 are formed by patterning the substrate 110.

For example, the formation of the fin structures 112 includes forming a patterned photoresist layer with openings (not shown) overlying the substrate 110; performing an etching process to remove a portion of the substrate 110 through openings; and removing the patterned photoresist layer. The etching process includes a reactive ion etch (RIE) or other suitable processes.

As shown in FIGS. 1A, 1B, and 2A, an isolation layer 120 is formed over the substrate 110 and between (or adjacent to) the fin structures 112, in accordance with some embodiments. The isolation layer 120 includes an insulating material, in accordance with some embodiments. The insulating material includes silicon oxide, silicon nitride, silicon oxynitride, another applicable material, or a combination thereof.

The formation of the isolation layer 120 includes forming an isolation material layer (not shown) over the substrate 110; and performing an etching back process on the isolation material layer to expose top portions of the fin structures 112, in accordance with some embodiments. The etching back process includes a dry etching process, in accordance with some embodiments.

As shown in FIGS. 1A, 1B, and 2A, dummy gate dielectric layers 132 and 134 are formed over the fin structures 112, respectively, in accordance with some embodiments. The dummy gate dielectric layers 132 and 134 are made of silicon oxide, in accordance with some embodiments.

Dummy gates 142 and 144 are formed over the dummy gate dielectric layers 132 and 134, respectively, in accordance with some embodiments. The dummy gates 142 and 144 are made of polysilicon, in accordance with some embodiments. The dummy gates 142 and 144 are spaced apart from each other, in accordance with some embodiments.

The formation of the dummy gate dielectric layers 132 and 134 and the dummy gates 142 and 144 includes depositing a dummy gate dielectric material layer (not shown) over the isolation layer 120 and the fin structures 112; depositing a dummy gate material layer (not shown) over the dummy gate dielectric material layer; and patterning the dummy gate material layer and the dummy gate dielectric material layer by a photolithography process and an etching process, in accordance with some embodiments.

The dummy gate dielectric material layer is deposited using a chemical vapor deposition process (CVD process), in accordance with some embodiments. The dummy gate material layer is deposited using a chemical vapor deposition process, in accordance with some embodiments.

FIGS. 2A-2H are cross-sectional views of various stages of a process for forming a semiconductor device structure 100, in accordance with some embodiments. After the stage of FIG. 2A, a spacer layer 150 is deposited over the isolation layer 120 to cover the dummy gate dielectric layers 132 and 134 and the dummy gates 142 and 144, as shown in FIG. 2B, in accordance with some embodiments. The spacer layer 150 includes an insulating material, such as silicon oxide or silicon nitride. The spacer layer 150 is formed using a chemical vapor deposition process, in accordance with some embodiments.

As shown in FIGS. 2B and 2C, an anisotropic etching process is performed to remove a portion of the spacer layer 150, in accordance with some embodiments. The spacer layer 150 remaining over the sidewalls of the dummy gate 142 and the dummy gate dielectric layer 132 forms spacers 152, in accordance with some embodiments. The spacer layer 150 remaining over the sidewalls of the dummy gate 144 and the dummy gate dielectric layer 134 forms spacers 154, in accordance with some embodiments.

The spacers 152 and 154 are configured to electrically isolate a gate formed subsequently from other devices and configured to act as a mask layer in a subsequent ion implantation process, in accordance with some embodiments. The anisotropic etching process includes a dry etching process, in accordance with some embodiments.

As shown in FIG. 2C, heavily doped regions 114 are formed in the fin structures 112, in accordance with some embodiments. The heavily doped regions 114 are formed in the fin structures 112 exposed by the dummy gates 142 and 144 and the spacers 152 and 154, in accordance with some embodiments.

The heavily doped regions 114 are formed using an ion implantation process, in accordance with some embodiments. The ion implantation process uses the dummy gates 142 and 144 and the spacers 152 and 154 as an ion implantation mask, in accordance with some embodiments. The ion implantation process is performed to introduce p-type impurities (e.g., boron) or n-type impurities (e.g., phosphorus) into the fin structures 112, in accordance with some embodiments.

Two adjacent of heavily doped regions 114 are a heavily doped source region and a heavily doped drain region, in accordance with some embodiments. The heavily doped regions 114 are located at the two opposite sides of the dummy gate 142 and the two opposite sides of the dummy gate 144, in accordance with some embodiments.

Thereafter, in some embodiments (not shown), stressors are formed in the heavily doped regions 114 by using suitable processes, in accordance with some embodiments. The suitable processes include, for example, an etching process for removing a portion of the fin structures 112 and a selective epitaxial growth (SEG) process. Depending on the desired type of the resulting FinFET device, either stressors applying a compressive stress to the channel region (such as SiGe stressors) or stressors applying a tensile stress to the channel region (such as SiC stressors) are formed.

As shown in FIG. 2C, an etch stop layer 160 is formed over the substrate 110 to cover the heavily doped regions 114, in accordance with some embodiments. The etch stop layer 160 further covers the dummy gates 142 and 144, the spacers 152 and 154, and the isolation layer 120, in accordance with some embodiments. The etch stop layer 160 includes a dielectric material, in accordance with some embodiments. The etch stop layer 160 includes silicon nitride, in accordance with some embodiments.

As shown in FIG. 2D, a dielectric layer 170 is deposited over the etch stop layer 160, in accordance with some embodiments. The dielectric layer 170 covers the isolation layer 120, the fin structures 112, the dummy gates 142 and 144, and the spacers 152 and 154, in accordance with some embodiments.

The dielectric layer 170 includes silicon oxide, silicon oxynitride, borosilicate glass (BSG), phosphoric silicate glass (PSG), borophosphosilicate glass (BPSG), fluorinated silicate glass (PSG), low-k material, porous dielectric material, or combinations thereof, in accordance with some embodiments. The dielectric layer 170 is deposited using a CVD process, a HDPCVD process, a spin-on process, a sputtering process, or a combination thereof, in accordance with some embodiments.

Afterwards, as shown in FIG. 2E, a planarization process is performed on the dielectric layer 170 until top surfaces of the dummy gates 142 and 144 are exposed, in accordance with some embodiments. The planarization process includes a chemical mechanical polishing (CMP) process, in accordance with some embodiments. After the planarization process is performed, the dielectric layer 170 has a substantially planar surface to facilitate subsequent process steps.

As shown in FIG. 2F, the dummy gates 142 and 144 are removed, in accordance with some embodiments. The removal process for removing the dummy gates 142 and 144 includes a wet etching process, a dry etching process, or a combination thereof, in accordance with some embodiments. In some embodiments, the dummy gate dielectric layers 132 and 134 are also removed.

After the dummy gates 142 and 144 and the dummy gate dielectric layers 132 and 134 are removed, a trench T1 is formed between the spacers 152, and a trench T2 is formed between the spacers 154, in accordance with some embodiments. The trench T1 exposes a portion of the fin structures 112, in accordance with some embodiments. The trench T2 exposes another portion of the fin structures 112, in accordance with some embodiments.

A width W1 of the trench T1 is less than a width W2 of the trench T2, in accordance with some embodiments. The width W1 ranges from about 5 nm to about 50 nm, in accordance with some embodiments. The width W2 ranges from about 51 nm to about 500 nm, in accordance with some embodiments. A ratio of the width W2 to the width W1 ranges from about 7 to about 13, in accordance with some embodiments.

As shown in FIG. 2G, a gate dielectric layer 180 is formed over bottom surfaces B1 and B2 of the trenches T1 and T2, in accordance with some embodiments. The gate dielectric layer 180 is further formed over inner walls S1 and S2 of the trenches T1 and T2, an upper surface 172 of the dielectric layer 170, and the spacers 152 and 154, in accordance with some embodiments.

The gate dielectric layer 180 includes a dielectric material, such as a high dielectric constant (high-k) material. The high-k material includes hafnium oxide (HfO₂), hafnium silicon oxide (HfSiO), hafnium silicon oxynitride (HfSiON), hafnium tantalum oxide (HfTaO), hafnium titanium oxide (HfTiO), hafnium zirconium oxide (HfZrO), other suitable high-k dielectric materials, or combinations thereof.

The high-k material is made of metal oxides, metal nitrides, metal silicates, transition metal-oxides, transition metal-nitrides, transition metal-silicates, oxynitrides of metals, aluminum oxide, hafnium dioxide-alumina (HfO₂—Al₂O₃) alloy, other suitable materials, or a combination thereof, in accordance with some embodiments.

The gate dielectric layer 180 is deposited by any suitable process, such as atomic layer deposition (ALD), chemical vapor deposition (CVD), physical vapor deposition (PVD), sputtering, plating, other suitable processes, or combinations thereof, in accordance with some embodiments. In some embodiments, the gate dielectric layer 180 needs to be further annealed.

An intermediate dielectric layer (not shown) may be formed over the fin structures 112 before the gate dielectric layer 180 is formed. The intermediate dielectric layer includes a suitable dielectric material, such as silicon oxide, hafnium silicate, silicon oxynitride, or combinations thereof.

As shown in FIG. 2G, a work function layer 190 is deposited over the gate dielectric layer 180, in accordance with some embodiments. The work function layer 190 provides a desired work function for transistors to enhance device performance including improved threshold voltage.

In the embodiments of forming an N-type FinFET, the work function layer 190 can be an n-type metal capable of providing a work function value suitable for the device, such as equal to or less than about 4.5 eV. The n-type metal includes metal, metal carbide, metal nitride, or combinations thereof, in accordance with some embodiments. For example, the n-type metal is made of tantalum, tantalum nitride, or combinations thereof.

On the other hand, in the embodiments of forming a P-type FinFET, the work function layer 190 can be a p-type metal capable of providing a work function value suitable for the device, such as equal to or greater than about 4.8 eV. The p-type metal includes metal, metal carbide, metal nitride, other suitable materials, or a combination thereof, in accordance with some embodiments.

For example, the p-type metal is made of titanium, titanium nitride, other suitable materials, or combinations thereof. The work function layer 190 is deposited using a PVD process, CVD process, ALD process, plating process, another suitable method, or combinations thereof, in accordance with some embodiments.

As shown in FIG. 2H, a gate electrode layer 210 (also called a metal gate electrode layer) is deposited over the work function layer 190 to fill the trenches T1 and T2, in accordance with some embodiments. The gate electrode layer 210 includes a suitable metal material, such as aluminum, tungsten, gold, platinum, cobalt, another suitable metal, an alloy thereof, or combinations thereof, in accordance with some embodiments.

The deposition process includes an atomic layer deposition (ALD) process and a chemical vapor deposition (CVD) process, in accordance with some embodiments. In some other embodiments, the gate electrode layer 210 is deposited using a PVD process, a plating process, the like, or combinations thereof.

FIG. 3A is a perspective view of a semiconductor device structure 100, in accordance with some embodiments. FIG. 3B is a top view of the semiconductor device structure 100 of FIG. 3A, in accordance with some embodiments. FIG. 4A-1 is a cross-sectional view illustrating the semiconductor device structure 100 along a sectional line I-1′ in FIG. 3B, in accordance with some embodiments. FIG. 4A-2 is a cross-sectional view illustrating the semiconductor device structure 100 along a sectional line 11-11′ in FIG. 3B, in accordance with some embodiments.

After the stage of FIG. 2H, the gate electrode layer 210, the work function layer 190, and the gate dielectric layer 180 outside of the trenches T1 and T2 are removed, as shown in FIGS. 3A, 3B, 4A-1, and 4A-2, in accordance with some embodiments. The removal process includes a planarization process, in accordance with some embodiments.

The planarization process includes a chemical mechanical polishing (CMP) process, in accordance with some embodiments. In some embodiments, after the removal process, a cleaning process is performed to clean residues from the CMP process. The cleaning process may also remove a portion of the gate material layer 210 in the trenches T1 and T2. The cleaning process includes a dry etching process, in accordance with some embodiments.

The gate material layer 210, the work function layer 190, and the gate dielectric layer 180 in the trench T1 form a gate stack G1, in accordance with some embodiments. The gate material layer 210, the work function layer 190, and the gate dielectric layer 180 in the trench T2 form a gate stack G2, in accordance with some embodiments. The gate material layer 210 of the gate stack G2 has an upper surface 212, in accordance with some embodiments. The upper surface 212 has recesses 212 a, in accordance with some embodiments.

FIG. 4A-1 to FIG. 4G-1 are cross-sectional views of various stages of a process for forming a semiconductor device structure 100, in accordance with some embodiments. FIG. 4A-2 to FIG. 4G-2 are cross-sectional views of various stages of the process for forming the semiconductor device structure 100, in accordance with some embodiments.

As shown in FIGS. 4B-1 and 4B-2, a planarization layer 220 is formed over the gate stacks G1 and G2, in accordance with some embodiments. The planarization layer 220 covers upper surfaces 212, 192, and 182 of the gate material layer 210, the work function layer 190, and the gate dielectric layer 180, in accordance with some embodiments. The planarization layer 220 fills the trenches T1 and T2, in accordance with some embodiments.

The planarization layer 220 is further formed over the spacers 152 and 154, the etch stop layer 160, and the dielectric layer 170, in accordance with some embodiments. The planarization layer 220 is in direct contact with the gate material layer 210, the work function layer 190, the gate dielectric layer 180, the etch stop layer 160, and the dielectric layer 170, in accordance with some embodiments.

The planarization layer 220 fills the recesses 212 a, in accordance with some embodiments. The planarization layer 220 has an upper surface 222, in accordance with some embodiments. The upper surface 222 is a substantially planar upper surface, in accordance with some embodiments. The upper surface 222 is more planar than the upper surface 212 of the gate material layer 210, in accordance with some embodiments.

The planarization layer 220 is made of a material that is different from the materials of the gate material layer 210, the spacers 152 and 154, the gate dielectric layer 180, the work function layer 190, and/or the dielectric layer 170, in accordance with some embodiments. In some embodiments, the planarization layer 220 is made of an insulating material.

In some embodiments, the planarization layer 220 includes a polymer material. In some embodiments, the planarization layer 220 includes carbon (C), hydrogen (H), and bromine (Br). In some embodiments, the planarization layer 220 is formed by a plasma deposition process. In some embodiments, a reaction gas used in the plasma deposition process includes methane and hydrogen bromide.

In some embodiments, the planarization layer 220 includes a photoresist material. In some embodiments, the planarization layer 220 is formed by a coating process (e.g., a spin coating process) or a chemical vapor deposition process.

In some embodiments, a largest thickness t1 of the planarization layer 220 ranges from about 10 nm to about 100 nm. In some embodiments, a ratio (t1/t2) of the largest thickness t1 to a largest thickness t2 of the gate material layer 210 over the fin structures 112 ranges from about 0.2 to about 3.3. The largest thickness t1 of the planarization layer 220 is greater than a depth D of the recess 212 a, in accordance with some embodiments.

As shown in FIGS. 4C-1 and 4C-2, the planarization layer 220 outside of the trenches T1 and T2 and an upper portion of the work function layer 190 are removed, in accordance with some embodiments. The removal process includes an etching process, in accordance with some embodiments. The etching process includes an anisotropic etching process, such as a dry etching process, in accordance with some embodiments.

The dry etching process includes a plasma etching process, in accordance with some embodiments. After the removal process, the upper surface 222 of the planarization layer 220 is substantially aligned with (or coplanar with) the upper surface 172 of the dielectric layer 170, in accordance with some embodiments. The upper surface 222 is more planar than the upper surface 212 of the gate material layer 210, in accordance with some embodiments.

As shown in FIGS. 4D-1 and 4D-2, a top portion of the gate dielectric layer 180 is removed, in accordance with some embodiments. The removal process includes a dry etching process, in accordance with some embodiments. The dry etching process includes a plasma etching process, in accordance with some embodiments.

As shown in FIGS. 4E-1 and 4E-2, a trimming process is performed to remove the planarization layer 220 and a top portion of the gate material layer 210, in accordance with some embodiments. The trimming process includes an etching process, in accordance with some embodiments. The etching process includes an anisotropic etching process, such as a dry etching process, in accordance with some embodiments. The dry etching process includes a plasma etching process, in accordance with some embodiments.

After the removal process, the gate material layer 210 remaining in the trench T1 forms a gate 214, in accordance with some embodiments. The gate material layer 210 remaining in the trench T2 forms a gate 216, in accordance with some embodiments. In this step, the gate 214, the work function layer 190, and the gate dielectric layer 180 in the trench T1 form the gate stack G1, in accordance with some embodiments. The gate 216, the work function layer 190, and the gate dielectric layer 180 in the trench T2 form the gate stack G2, in accordance with some embodiments.

FIG. 5 is a cross-sectional view of a plasma apparatus 500, in accordance with some embodiments. As shown in FIG. 4C-1 to FIG. 4E-1 and FIG. 5, the etching processes for partially removing the work function layer 190, the gate dielectric layer 180, and the gate material layer 210 include dry etching processes, in accordance with some embodiments. The dry etching processes include plasma etching processes, in accordance with some embodiments.

The deposition process of the planarization layer 220 and at least one of the aforementioned etching processes are performed using the same plasma apparatus 500 but using different reaction gases, in accordance with some embodiments. The deposition process of the planarization layer 220 and at least one of the aforementioned etching processes are performed in the same chamber 510 of the plasma apparatus 500, in accordance with some embodiments.

That is, the deposition process of the planarization layer 220 and at least one of the aforementioned etching processes are performed in situ, in accordance with some embodiments. Therefore, the embodiments prevent the semiconductor device structure 100 from being transferred from one chamber to the other during the deposition process and the aforementioned etching processes. As a result, the embodiments prevent the semiconductor device structure 100 from damage or contamination, which improves yield of the semiconductor device structure 100.

As shown in FIG. 4E-1, the gate 214 has an upper surface 214 a, in accordance with some embodiments. The gate 216 has an upper surface 216 a, in accordance with some embodiments. Since the upper surface 222 of the planarization layer 220 is a planar surface, the upper surfaces 214 a and 216 a are also substantially planar upper surfaces, in accordance with some embodiments.

Therefore, the upper surfaces 214 a and 216 a are more planar than the upper surface 212 of the gate material layer 210 (as shown in FIG. 4A-1), in accordance with some embodiments. As a result, the uniformity of the thickness of the gate 216 (or the gate 214) is improved, which improves the yield of the semiconductor device structure 100.

As shown in FIGS. 4F-1 and 4F-2, an insulating layer 230 is formed over the gate stacks G1 and G2 to fill the trenches T1 and T2, in accordance with some embodiments. The insulating layer 230 covers the gate stacks G1 and G2, the spacers 152 and 154, the etch stop layer 160, and the dielectric layer 170, in accordance with some embodiments. The insulating layer 230 includes silicon nitride, in accordance with some embodiments. The insulating layer 230 is formed by a CVD process, a PVD process, or another suitable process.

FIG. 6A is a perspective view of the semiconductor device structure 100 of FIGS. 4G-1 and 4G-2, in accordance with some embodiments. FIG. 6B is a top view of the semiconductor device structure 100 of FIGS. 4G-1 and 4G-2, in accordance with some embodiments. FIG. 4G-1 is a cross-sectional view illustrating the semiconductor device structure 100 along a sectional line 1-1′ in FIG. 6B, in accordance with some embodiments. FIG. 4G-2 is a cross-sectional view illustrating the semiconductor device structure 100 along a sectional line 11-11′ in FIG. 6B, in accordance with some embodiments. It should be noted that, for the sake of simplicity, the insulating layer 230 is omitted in FIG. 6B.

As shown in FIGS. 4G-1, 4G-2, 6A, and 6B, the insulating layer 230 outside of the trenches T1 and T2 is removed, in accordance with some embodiments. The removal process includes a planarization process, in accordance with some embodiments. The planarization process includes a chemical mechanical polishing process or the like, in accordance with some embodiments.

FIG. 7 is an enlarged view of the gate stack G2, in accordance with some embodiments. As shown in FIG. 7, a highest point of the gate 216 with respect to an upper surface 112 a of the fin structure 112 has a height H1, in accordance with some embodiments. A lowest point of the gate 216 with respect to the upper surface 112 a has a height H2, in accordance with some embodiments.

The difference (H1−H2) between the height H1 and the height H2 is less than 10 nm, in accordance with some embodiments. The difference (H1−H2) ranges from about 0.1 nm to about 5 nm, in accordance with some embodiments. The difference (H1−H2) ranges from about 0.1 nm to about 0.95 nm, in accordance with some embodiments.

As shown in FIG. 6B, the gate stack G2 has a width equal to the width W2, in accordance with some embodiments. The gate stack G2 has a length L, in accordance with some embodiments. As shown in FIGS. 6B and 7, when the width W2 is less than or equal to 500 nm and the length L is less than or equal to 1 μm, the difference (H1−H2) ranges from about 0.1 nm to about 5 nm.

In accordance with some embodiments, methods for forming semiconductor device structures are provided. The methods (for forming the semiconductor device structure) form a planarization layer over a gate material layer before performing a trimming process. The planarization layer fills recesses of the gate material layer and has a substantially planar upper surface. Thereafter, the trimming process is performed on the planarization layer and the gate material layer sequentially to form a gate with a substantially planar upper surface. As a result, the uniformity of the thickness of the gate over fin structures is improved, which improves the yield of the semiconductor device structures.

In accordance with some embodiments, a method for forming a semiconductor device structure is provided. The method includes forming a dielectric layer over a substrate. The substrate has a fin structure, and the dielectric layer has a trench exposing a portion of the fin structure. The method includes forming a gate material layer in the trench. The method includes forming a planarization layer over the gate material layer. The planarization layer includes a first material that is different from a second material of the gate material layer and a third material of the dielectric layer. The method includes performing an etching process to remove the planarization layer and a first upper portion of the gate material layer so as to form a gate in the trench. In accordance with some embodiments, a method for forming a semiconductor device structure is provided. The method includes forming a dielectric layer over a substrate. The substrate has a fin structure, and the dielectric layer has a trench exposing a portion of the fin structure. The method includes forming a gate material layer in the trench. The method includes performing a plasma deposition process to form a planarization layer over the gate material layer. The method includes performing an etching process to remove the planarization layer and a first upper portion of the gate material layer so as to form a gate in the trench.

In accordance with some embodiments, a method for forming a semiconductor device structure is provided. The method includes forming a dielectric layer over a substrate. The substrate has a fin structure, and the dielectric layer has a trench exposing a portion of the fin structure. The method includes forming a gate material layer in the trench. The method includes forming a planarization layer over the gate material layer. The method includes performing an anisotropic etching process to remove the planarization layer and a first upper portion of the gate material layer. The gate material layer remaining in the trench forms a gate. A first upper surface of the gate is more planar than a second upper surface of the gate material layer before the anisotropic etching process.

One general aspect of embodiments disclosed herein includes a method for forming a semiconductor device structure, including: forming a dielectric layer over a substrate, where the substrate has a fin structure, and the dielectric layer has a trench exposing a portion of the fin structure; forming a gate material layer in the trench; performing a plasma deposition process to form a planarization layer over the gate material layer; and performing an etching process to remove the planarization layer and a first upper portion of the gate material layer so as to form a gate in the trench.

Another general aspect of embodiments disclosed herein includes a method for forming a semiconductor device structure, including: forming a dielectric layer over a substrate, where the substrate has a fin structure, and the dielectric layer has a trench exposing a portion of the fin structure; forming a gate material layer in the trench; forming a planarization layer over the gate material layer; and performing an anisotropic etching process to remove the planarization layer and a first upper portion of the gate material layer, where the gate material layer remaining in the trench forms a gate, and a first upper surface of the gate is more planar than a second upper surface of the gate material layer before the anisotropic etching process.

Yet another general aspect of embodiments disclosed herein includes a method for forming a semiconductor device structure, including: forming a dielectric layer over a substrate, where the dielectric layer has a trench exposing a portion of the substrate; forming a gate material layer in the trench; forming a planarization layer over the gate material layer, where the planarization layer includes a first material that is different from a second material of the gate material layer and a third material of the dielectric layer; and performing an etching process to remove the planarization layer and a first upper portion of the gate material layer so as to form a gate in the trench.

Another general aspect of embodiments disclosed herein includes forming a dummy structure over a portion of a substrate. The method also includes forming a dielectric layer around the dummy structure. The method also includes removing the dummy structure, leaving behind a trench. The method also includes over-filling the trench with one or more fill layers, where a topmost surface of the one or more fill layers extends above a topmost surface of the dielectric layer. The method also includes removing top portions of the one or more fill layers until a topmost surface of the one or more fill layers is below the topmost surface of the dielectric layer. The method also includes after the step of removing top portions of the one or more fill layers, forming a planarization layer on the one or more fill layers. The method also includes in a first removing step, removing a top portion of the planarization layer while leaving a remaining portion of the planarization layer. The method also includes. The method also includes in a second removing step, removing the remaining portion of the planarization layer and a top portion of at least one of the one or more fill layers.

Yet another general aspect of embodiments disclosed herein includes a method, forming a dummy gate structure over a channel region of a substrate. The method also includes forming spacers on respective sidewalls of the dummy gate structure. The method also includes removing the dummy gate structure from between the spacers, leaving behind a trench defined by sidewalls of the spacers and by the channel region. The method also includes over-filling the trench with a gate stack, where a topmost surface of the gate stack extends above a topmost surface of the spacers. The method also includes removing atop portion of the gate stack until a topmost surface of the gate stack is below the topmost surface of the spacers. The method also includes after the step of removing top portions of the gate stack, depositing a planarization layer on the gate stack such that a topmost surface of the planarization layer is at least as high as the topmost surface of the spacers. The method also includes etching back the planarization layer to be co-planar with the topmost surface of the spacers. The method also includes and removing the planarization layer and a top portion of the gate stack.

Still another general aspect of embodiments disclosed herein includes a substrate having therein a channel region. The semiconductor device also includes a dielectric layer overlying the substrate, the dielectric layer having therein a trench overlying the channel region. The device also includes a gate dielectric extending along the channel region and extending partially up sidewalls of the trench. The device also includes a conductive work function layer on the gate dielectric and extending partially up sidewalls of the trench. The device also includes a gate electrode on the conductive work function layer and partially filling the trench, a topmost surface of the gate electrode being below a topmost surface of the dielectric layer and sidewalls of the gate electrode being spaced apart from respective sidewalls of the trench, where the topmost surface of the gate electrode deviates in height, relative to an uppermost surface of the channel region, by less than 10 nm. The device also includes an insulating layer on the gate electrode dielectric, the insulating layer extending between the sidewalls of the gate electrode and sidewalls of the trench and having a bottommost surface contacting respective topmost surfaces of the gate dielectric and the conductive work function layer.

Still another general aspect of embodiments disclosed herein includes a substrate having therein a channel region. The semiconductor device also includes a dielectric layer overlying the substrate, the dielectric layer having therein a trench overlying the channel region. The device also includes a gate dielectric extending along the channel region and extending partially up sidewalls of the trench. The device also includes a conductive work function layer on the gate dielectric and extending partially up sidewalls of the trench. The device also includes a gate electrode on the conductive work function layer and partially filling the trench, a topmost surface of the gate electrode being below a topmost surface of the dielectric layer and sidewalls of the gate electrode being spaced apart from respective sidewalls of the trench, where the topmost surface of the gate electrode deviates in height, relative to an uppermost surface of the channel region, by less than 10 nm. The device also includes and an insulating layer on the gate electrode dielectric, the insulating layer extending between the sidewalls of the gate electrode and sidewalls of the trench and having a bottommost surface contacting respective topmost surfaces of the gate dielectric and the conductive work function layer.

Yet another general aspect of embodiments disclosed herein includes a plurality of fin structures extending from a substrate, each fin structure of the plurality of fin structures having a longitudinal axis extending in a first direction. The semiconductor device also includes a first gate structure extending across the plurality of fin structures in a second direction perpendicular to the first direction. The device also includes a second gate structure extending across the plurality of fin structures in a second direction perpendicular to the first direction. The device also includes and where the first gate structure includes: a gate spacer layer extending a first height above a topmost surface of a first fin of the plurality of fin structures, the gate spacer layer forming a trench extending in the first direction, a gate electrode dielectric extending along sidewalls of the trench and extending a second height, less than the first height, above the topmost surface of the first fin of the plurality of fin structures, a work function layer on the gate electrode dielectric and extending a third height, less than the first height, above the topmost surface of the first fin of the plurality of fin structures, and a metal gate electrode on the work function layer, the first gate structure having a first width measured in the first direction and extending a nominal fourth height above a topmost surface of a first fin of the plurality of fin structures, the nominal fourth height being less than the first height and greater than the second and third height, where deviation in the nominal fourth height across the width of the metal gate electrode is less than about 1% of the width.

In yet another general aspect, embodiments disclosed herein include a substrate having therein a fin. The semiconductor device also includes a dielectric layer overlying the substrate, the dielectric layer having therein a first trench overlying the fin. The device also includes a first gate dielectric extending over the fin and extending partially up sidewalls of the first trench. The device also includes a first conductive work function layer on the first gate dielectric and extending partially up sidewalls of the first trench. The device also includes a first gate electrode on the first conductive work function layer, a topmost surface of the first gate electrode being below a topmost surface of the dielectric layer and sidewalls of the first gate electrode being spaced apart from respective sidewalls of the first trench, where the topmost surface of the first gate electrode deviates in height, relative to an uppermost surface of the fin, by less than 10 nm. The device also includes a first insulating layer on the first gate electrode dielectric, the first insulating layer extending between the sidewalls of the first gate electrode and sidewalls of the first trench and having a bottommost surface contacting respective topmost surfaces of the first gate dielectric and the first conductive work function layer. The device also includes the dielectric layer having therein a second trench overlying the fin. The device also includes a second gate dielectric extending over the fin and extending partially up sidewalls of the second trench. The device also includes a second conductive work function layer on the second gate dielectric and extending partially up sidewalls of the second trench. The device also includes a second gate electrode on the second conductive work function layer, a topmost surface of the second gate electrode being below a topmost surface of the dielectric layer and sidewalls of the second gate electrode being spaced apart from respective sidewalls of the second trench, where the topmost surface of the second gate electrode deviates in height, relative to an uppermost surface of the fin, by less than 10 nm. The device also includes and a second insulating layer on the second gate electrode dielectric, the second insulating layer extending between the sidewalls of the second gate electrode and sidewalls of the second trench and having a bottommost surface contacting respective topmost surfaces of the second gate dielectric and the second conductive work function layer.

The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure. 

What is claimed is:
 1. A semiconductor device comprising: a substrate having therein a channel region; a dielectric layer overlying the substrate, the dielectric layer having therein a trench overlying the channel region; a gate dielectric extending along the channel region and extending partially up sidewalls of the trench; a conductive work function layer on the gate dielectric and extending partially up sidewalls of the trench; a gate electrode on the conductive work function layer and partially filling the trench, a topmost surface of the gate electrode being below a topmost surface of the dielectric layer and sidewalls of the gate electrode being spaced apart from respective sidewalls of the trench, wherein the topmost surface of the gate electrode deviates in height, relative to an uppermost surface of the channel region, by less than 10 nm; and an insulating layer on the gate electrode dielectric, the insulating layer extending between the sidewalls of the gate electrode and sidewalls of the trench and having a bottommost surface contacting respective topmost surfaces of the gate dielectric and the conductive work function layer.
 2. The semiconductor device of claim 1, wherein the topmost surface of the gate electrode deviates in height, relative to an uppermost surface of the channel region, by from about 0.1 nm to about 5 nm.
 3. The semiconductor device of claim 2, wherein the topmost surface of the gate electrode deviates in height, relative to an uppermost surface of the channel region, by from about 0.1 nm to about 0.95 nm.
 4. The semiconductor device of claim 1, wherein the gate electrode has a width and a length, when viewed from a top-down perspective, and the gate electrode has a maximum deviation in height relative to an uppermost surface of the channel region when viewed in a cross-sectional perspective, and wherein the maximum deviation in height less than or equal to about 1% of the width.
 5. The semiconductor device of claim 1, wherein the gate electrode has a width and a length, when viewed from a top-down perspective, and the gate electrode has a maximum deviation in height relative to an uppermost surface of the channel region when viewed in a cross-sectional perspective, and wherein the maximum deviation in height less than or equal to about 0.5% of the length.
 6. The semiconductor device of claim 1, further comprising: a second channel region in the substrate, the second channel region having a channel length greater than a channel length of the channel region; the dielectric layer having therein a second trench overlying the second channel region; a second gate dielectric extending along the second channel region and extending partially up sidewalls of the second trench; a second conductive work function layer on the second gate dielectric and extending partially up sidewalls of the second trench; a second gate electrode on the second conductive work function layer and partially filling the second trench, a topmost surface of the second gate electrode being below a topmost surface of the dielectric layer and sidewalls of the second gate electrode being spaced apart from respective sidewalls of the second trench, wherein the topmost surface of the second gate electrode deviates in height, relative to an uppermost surface of the second channel region, by less than 10 nm; and a second insulating layer on the second gate electrode dielectric, the second insulating layer extending between the sidewalls of the second gate electrode and sidewalls of the second trench and having a bottommost surface contacting respective topmost surfaces of the second gate dielectric and the second conductive work function layer.
 7. The semiconductor device of claim 6, wherein the channel region and the second channel region are within a same fin structure extending from a major surface of the substrate.
 8. The semiconductor device of claim 7, wherein the channel region has a first length relative to a longitudinal axis of said same fin structure, the second channel region has a second length relative to the longitudinal axis of said same fin structure, and wherein the second length is greater than the first length.
 9. A semiconductor device comprising: a plurality of fin structures extending from a substrate, each fin structure of the plurality of fin structures having a longitudinal axis extending in a first direction; a first gate structure extending across the plurality of fin structures in a second direction perpendicular to the first direction; a second gate structure extending across the plurality of fin structures in a second direction perpendicular to the first direction; and wherein the first gate structure includes: a gate spacer layer extending a first height above a topmost surface of a first fin of the plurality of fin structures, the gate spacer layer forming a trench extending in the first direction, a gate electrode dielectric extending along sidewalls of the trench and extending a second height, less than the first height, above the topmost surface of the first fin of the plurality of fin structures, a work function layer on the gate electrode dielectric and extending a third height, less than the first height, above the topmost surface of the first fin of the plurality of fin structures, and a metal gate electrode on the work function layer, the first gate structure having a first width measured in the first direction and extending a nominal fourth height above a topmost surface of a first fin of the plurality of fin structures, the nominal fourth height being less than the first height and greater than the second and third height, wherein deviation in the nominal fourth height across the width of the metal gate electrode is less than about 1% of the width.
 10. The semiconductor device of claim 9, further comprising: an insulating layer on the gate electrode dielectric, the insulating layer extending between the sidewalls of the metal gate electrode and sidewalls of the trench and having a bottommost surface contacting respective topmost surfaces of the gate electrode dielectric and the work function layer.
 11. The semiconductor device of claim 9, wherein the metal gate electrode further has a length extending in the second direction and further wherein deviation in the nominal fourth height across the length of the metal gate electrode is less than about 0.5% of the length.
 12. The semiconductor device of claim 10, wherein the second gate structure incudes a second metal gate electrode having a second width, greater than the first width, measured in the first direction, and having a nominal fifth height relative to the topmost surface of the first fin of the plurality of fin structures, and further wherein deviation in the nominal fifth height across the second width is less than about 1% of the second width.
 13. The semiconductor device of claim 9, wherein the second height and the third height are the same.
 14. The semiconductor device of claim 12, wherein the nominal fourth height and the nominal fifth height are the same.
 15. The semiconductor device of claim 1, wherein the insulating layer comprises silicon nitride.
 16. The semiconductor device of claim 10, wherein the insulating layer has a topmost surface that is above the topmost surface of the gate spacer layer.
 17. A semiconductor device comprising: a substrate having therein a fin; a dielectric layer overlying the substrate, the dielectric layer having therein a first trench overlying the fin; a first gate dielectric extending over the fin and extending partially up sidewalls of the first trench; a first conductive work function layer on the first gate dielectric and extending partially up sidewalls of the first trench; a first gate electrode on the first conductive work function layer, a topmost surface of the first gate electrode being below a topmost surface of the dielectric layer and sidewalls of the first gate electrode being spaced apart from respective sidewalls of the first trench, wherein the topmost surface of the first gate electrode deviates in height, relative to an uppermost surface of the fin, by less than 10 nm; an first insulating layer on the first gate electrode dielectric, the first insulating layer extending between the sidewalls of the first gate electrode and sidewalls of the first trench and having a bottommost surface contacting respective topmost surfaces of the first gate dielectric and the first conductive work function layer; the dielectric layer having therein a second trench overlying the fin; a second gate dielectric extending over the fin and extending partially up sidewalls of the second trench; a second conductive work function layer on the second gate dielectric and extending partially up sidewalls of the second trench; a second gate electrode on the second conductive work function layer, a topmost surface of the second gate electrode being below a topmost surface of the dielectric layer and sidewalls of the second gate electrode being spaced apart from respective sidewalls of the second trench, wherein the topmost surface of the second gate electrode deviates in height, relative to an uppermost surface of the fin, by less than 10 nm; and a second insulating layer on the second gate electrode dielectric, the second insulating layer extending between the sidewalls of the second gate electrode and sidewalls of the second trench and having a bottommost surface contacting respective topmost surfaces of the second gate dielectric and the second conductive work function layer.
 18. The semiconductor device of claim 17, wherein a ratio of the width of the second trench relative to the width of the first trench ranges from about 7 to about
 13. 19. The semiconductor device of claim 17, wherein the first gate electrode is part of a first transistor, the second gate electrode is part of a second transistor, and wherein the first transistor and the second transistor share a common source/drain region.
 20. The semiconductor device of claim 17, wherein the topmost surface of the first gate electrode deviates in height, relative to an uppermost surface of the fin, by less than about 0.95 nm. 